gan on sic hemt power transistor 150 w, 1 - 2500 mhz rev. v1 magx - 000025 - 150000 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 1 features ? gan on sic transistor technology ? broadband unmatched transistor ? common - source configuration ? +50 v typical operation ? class ab operation ? rohs* compliant and 260c reflow compatible ? mttf = 600 years (t j < 200 c) applications ? general purpose for pulsed or cw applications description the magx - 000025 - 150000 is a gold - metalized gallium nitride (gan) on silicon carbide (sic) rf power transistor suitable for a variety of rf power amplifier applications. using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for todays demanding application needs. high breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. * restrictions on hazardous substances, european union directive 2002/95/ec. part number description magx - 000025 - 150000 flanged magx - 000025 - sb2ppr 1200 - 1400 mhz evaluation board magx - 000025 - sb1ppr 2500 mhz evaluation board ordering information magx - 000025 - 150000 functional schematic pin no. function 1 vgg/rf input 2 vdd/rf output 3 vgg/rf input 4 vdd/rf output
gan on sic hemt power transistor 150 w, 1 - 2500 mhz rev. v1 magx - 000025 - 150000 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 2 electrical specifications 1 : freq. = 1200 - 1400 mhz, t a = 25c parameter test conditions symbol min. typ. max. units rf functional tests: v dd = 50 v, i dq = 600 ma, 300 s pulse, 20% duty output power p in = 2.5 w p out 150 170 - w power gain p in = 2.5 w g p 17.5 18 - db drain efficiency p in = 2.5 w d 52 58 - % droop p in = 2.5 w droop - 0.2 0.3 db load mismatch stability p in = 2.5 w vswr - s - 5:1 - - load mismatch tolerance p in = 2.5 w vswr - t - 10:1 - - typical rf characteristics 2 : freq. = 2500 mhz, t a = 25c 1. electrical specifications measured in macom rf evaluation board. 2. typical rf characteristics measured in macom rf evaluation board. 3. all dc characteristics are per side. parameter test conditions symbol min. typ. max. units dc characteristics (per side): drain - source leakage current v gs = - 8 v, v ds = 175 v i ds - 2 5.28 ma gate threshold voltage v ds = 5 v, i d = 75 ma v gs (th) - 5 - 3.1 - 2 v forward transconductance v ds = 5 v, i d = 17.5 ma g m 2 2.8 - s dynamic characteristics (per side): input capacitance v ds = 0 v, v gs = - 8 v, f = 1 mhz c iss - 26.4 - pf output capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c oss - 11.2 - pf reverse transfer capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c rss - 1 - pf electrical characteristics 3 : t a = 25c parameter test conditions symbol typ. units max. min. rf functional tests: v dd = 50 v, i dq = 600 ma, 300 s pulse, 20% duty output power p in = 7 w p out 125 w - - power gain p in = 7 w g p 12.5 db - - drain efficiency p in = 7 w d 48 % - - droop p in = 7 w droop 0.1 db - - load mismatch stability p in = 7 w vswr - s 5:1 - - - load mismatch tolerance p in = 7 w vswr - t 10:1 - - - rf functional tests: v dd = 28 v, i dq = 600 ma, cw input power p out = 35 w p in 2 w - - power gain p out = 35 w g p 12 db - - drain efficiency p out = 35 w d 45 % - - load mismatch stability p out = 35 w vswr - s 5:1 - - - load mismatch tolerance p out = 35 w vswr - t 10:1 - - -
gan on sic hemt power transistor 150 w, 1 - 2500 mhz rev. v1 magx - 000025 - 150000 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 3 absolute maximum ratings 4,5,6,7,8 parameter limit supply voltage (v dd ) +65 v supply voltage (v gs ) - 8 to - 2 v supply current (i dmax ) for cw operation at v dd = 28 v 5.5 a supply current (i dmax ) for pulsed operation at v dd = 50 v 8.3 a input power (p in ) for cw operation at v dd = 28 v p in (typical) + 1.5 db input power (p in ) for pulsed operation at v dd = 50 v 40 dbm absolute max. junction/channel temperature 200oc power dissipation at 85 oc for cw operation at v dd = 28 v 79 w power dissipation at 85 oc for pulsed operation at v dd = 50 v 177 w thermal resistance, (t j = 200 oc) v dd = 28 v, i dq = 600 ma, pout = 35 w, cw 1.45 oc/w thermal resistance, (t j = 200 oc) v dd = 50 v, i dq = 600 ma, pin = 7 w, pulsed 0.65 oc/w operating temperature - 40 to +95oc storage temperature - 65 to +150oc mounting temperature see solder reflow profile esd min. - charged device model (cdm) 300 v esd min. - human body model (hbm) 700 v 4. operation of this device above any one of these parameters may cause permanent damage. 5. for cw operation, input power limit is +1.5 db over nominal drive required to achieve p out = 35 w. 6. channel temperature directly affects a device's mttf. channel temperature should be kept as low as possible to maximize l ife time. 7. for saturated performance it is recommended that the sum of (3*v dd + abs(v gg )) <175 v. 8. pulsed operation is specified for a 300 s pulse, 20% duty.
gan on sic hemt power transistor 150 w, 1 - 2500 mhz rev. v1 magx - 000025 - 150000 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 4 correct device sequencing test fixture impedances (per side) f (mhz) z if (1,2) ( ) z of (1,2) ( ) 1200 0.8 + j0.5 9.4 + j4.1 1300 0.9 + j0.2 7.2 + j3.0 1400 0.5 - j0.2 5.4 + j3.4 2500 1.2 - j3.4 3.1 + j1.4 turning the device on 1. set v gs to the pinch - off (v p ), typically - 5 v. 2. turn on v ds to nominal voltage: [(300 s, 20%) = 50 v; (2.5 ghz, cw) = 28 v]. 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v gs down to v p. 3. decrease v ds down to 0 v. 4. turn off v gs
gan on sic hemt power transistor 150 w, 1 - 2500 mhz rev. v1 magx - 000025 - 150000 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 5 test fixture assembly (1200 - 1400 mhz) contact factory for gerber file or additional circuit information. test fixture assembly (2500 mhz)
gan on sic hemt power transistor 150 w, 1 - 2500 mhz rev. v1 magx - 000025 - 150000 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 6 typical performance curves 2500 mhz, 300 s pulse, 20% duty, v dd = 50 v, idq = 600 ma output power vs. input power drain efficiency vs. output power application section 1200 - 1400 mhz, 300 s pulse, 20% duty, v dd = 50 v, idq = 600 ma output power vs. input power drain efficiency vs. output power 2500 mhz, cw, v dd = 28 v, idq = 600 ma output power vs. input power drain efficiency vs. output power 0 5 10 15 20 25 30 35 40 45 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (w) p in (w) 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 eff (%) p out (w) 0 25 50 75 100 125 150 175 200 225 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 p out (w) p in (w) 1200 1300 1400 0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 175 200 eff (%) p out (w) 1200 1300 1400 0 20 40 60 80 100 120 140 0 1 2 3 4 5 6 7 8 p out (w ) p in (w) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 eff (%) p out (w)
gan on sic hemt power transistor 150 w, 1 - 2500 mhz rev. v1 magx - 000025 - 150000 7 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 7 outline drawing magx - 000025 - 150000 macom gx0025 - 150 lot no. / ser no.
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